$299.00 $149.50

The 11 N 120 IGBT ON is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronics. It has a voltage of 1200V and a current rating of 43A, making it ideal for motor drives, renewable energy systems, and industrial applications. It ensures efficient power handling and reliable performance.

Features:

  • 43 A, 1200 V, TC = 25 C
  • 1200 V Switching SOA Capability
  • Typical Fall Time: 340 ns at TJ = 150 C
  • Short Circuit Rating
  • Low Conduction Loss
  • This is PbFree Device

Specifications:

Description

Value

Collector to Emitter Voltage VCES

1200 V

Collector Current Continuous

At TC = 25C IC25 At TC = 110C IC110

43 A

22 A

Collector Current Pulsed ICM

80 A

Gate to Emitter Voltage Continuous VGES

20 V

Gate to Emitter Voltage Pulsed VGEM

30 V

Switching Safe Operating Area at TJ = 150C SSOA

55 A at 1200 V

Power Dissipation Total at TC = 25C PD

Power Dissipation Derating TC > 25C

298 W

2.38 W/C

Operating and Storage Junction Temperature Range TJ, TSTG

55 to 150 C

Maximum Lead Temperature for Soldering TL

260 C

Short Circuit Withstand Time at VGE = 15 V tSC

8 s

Short Circuit Withstand Time at VGE = 12 V tSC

15 s

Click here for more information - DATASHEET

SKU:HXH392941970

The 11 N 120 IGBT ON is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronics. It has a voltage of 1200V and a current rating of 43A, making it ideal for motor drives, renewable energy systems, and industrial applications. It ensures efficient power handling and reliable performance.

Features:

  • 43 A, 1200 V, TC = 25 C
  • 1200 V Switching SOA Capability
  • Typical Fall Time: 340 ns at TJ = 150 C
  • Short Circuit Rating
  • Low Conduction Loss
  • This is PbFree Device

Specifications:

Description

Value

Collector to Emitter Voltage VCES

1200 V

Collector Current Continuous

At TC = 25C IC25 At TC = 110C IC110

43 A

22 A

Collector Current Pulsed ICM

80 A

Gate to Emitter Voltage Continuous VGES

20 V

Gate to Emitter Voltage Pulsed VGEM

30 V

Switching Safe Operating Area at TJ = 150C SSOA

55 A at 1200 V

Power Dissipation Total at TC = 25C PD

Power Dissipation Derating TC > 25C

298 W

2.38 W/C

Operating and Storage Junction Temperature Range TJ, TSTG

55 to 150 C

Maximum Lead Temperature for Soldering TL

260 C

Short Circuit Withstand Time at VGE = 15 V tSC

8 s

Short Circuit Withstand Time at VGE = 12 V tSC

15 s

Click here for more information – DATASHEET

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