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The 11 N 120 IGBT ON is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronics. It has a voltage of 1200V and a current rating of 43A, making it ideal for motor drives, renewable energy systems, and industrial applications. It ensures efficient power handling and reliable performance.
Features:
Specifications:
Description | Value |
Collector to Emitter Voltage VCES | 1200 V |
Collector Current Continuous At TC = 25C IC25 At TC = 110C IC110 | 43 A 22 A |
Collector Current Pulsed ICM | 80 A |
Gate to Emitter Voltage Continuous VGES | 20 V |
Gate to Emitter Voltage Pulsed VGEM | 30 V |
Switching Safe Operating Area at TJ = 150C SSOA | 55 A at 1200 V |
Power Dissipation Total at TC = 25C PD Power Dissipation Derating TC > 25C | 298 W 2.38 W/C |
Operating and Storage Junction Temperature Range TJ, TSTG | 55 to 150 C |
Maximum Lead Temperature for Soldering TL | 260 C |
Short Circuit Withstand Time at VGE = 15 V tSC | 8 s |
Short Circuit Withstand Time at VGE = 12 V tSC | 15 s |
Click here for more information - DATASHEET
The 11 N 120 IGBT ON is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronics. It has a voltage of 1200V and a current rating of 43A, making it ideal for motor drives, renewable energy systems, and industrial applications. It ensures efficient power handling and reliable performance.
Features:
Specifications:
|
Description |
Value |
|
Collector to Emitter Voltage VCES |
1200 V |
|
Collector Current Continuous At TC = 25C IC25 At TC = 110C IC110 |
43 A 22 A |
|
Collector Current Pulsed ICM |
80 A |
|
Gate to Emitter Voltage Continuous VGES |
20 V |
|
Gate to Emitter Voltage Pulsed VGEM |
30 V |
|
Switching Safe Operating Area at TJ = 150C SSOA |
55 A at 1200 V |
|
Power Dissipation Total at TC = 25C PD Power Dissipation Derating TC > 25C |
298 W 2.38 W/C |
|
Operating and Storage Junction Temperature Range TJ, TSTG |
55 to 150 C |
|
Maximum Lead Temperature for Soldering TL |
260 C |
|
Short Circuit Withstand Time at VGE = 15 V tSC |
8 s |
|
Short Circuit Withstand Time at VGE = 12 V tSC |
15 s |
Click here for more information – DATASHEET
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